发明授权
US08063670B2 High voltage high side transistor driver 有权
高压高侧晶体管驱动器

  • 专利标题: High voltage high side transistor driver
  • 专利标题(中): 高压高侧晶体管驱动器
  • 申请号: US12619198
    申请日: 2009-11-16
  • 公开(公告)号: US08063670B2
    公开(公告)日: 2011-11-22
  • 发明人: Sehat Sutardja
  • 申请人: Sehat Sutardja
  • 申请人地址: BB St. Michael
  • 专利权人: Marvell World Trade Ltd.
  • 当前专利权人: Marvell World Trade Ltd.
  • 当前专利权人地址: BB St. Michael
  • 主分类号: H03K3/00
  • IPC分类号: H03K3/00
High voltage high side transistor driver
摘要:
A transistor driver includes a sender module configured to generate a power input signal. A converter module includes a transformer including a first side and a second side. The first side of the transformer is configured to receive the power input signal. A rectifier is connected to the second side of the transformer. The converter module is configured to generate an output signal at an output of the rectifier. A first receiver module is connected to each of the second side of the transformer and the output of the rectifier. The first receiver module is configured to transition a first transistor between an ON state and an OFF state based on a first signal received from the second side of the transformer.
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