发明授权
- 专利标题： Method and system for inspecting indirect bandgap semiconductor structure
- 专利标题（中）： 检查间接带隙半导体结构的方法和系统
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申请号： US12083429申请日： 2006-10-11
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公开(公告)号： US08064054B2公开(公告)日： 2011-11-22
- 发明人: Thorsten Trupke , Robert Andrew Bardos
- 申请人： Thorsten Trupke , Robert Andrew Bardos
- 申请人地址： AU Surry Hills, New South Wales
- 专利权人： BT Imaging Pty Ltd
- 当前专利权人： BT Imaging Pty Ltd
- 当前专利权人地址： AU Surry Hills, New South Wales
- 代理机构： Fish & Richardson P.C.
- 优先权： AU2005905598 20051011
- 国际申请： PCT/AU2006/001420 WO 20061011
- 国际公布： WO2007/041758 WO 20070419
- 主分类号： G01J3/40
- IPC分类号： G01J3/40
摘要：
Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure. The photoluminescence images are imaged processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.