发明授权
- 专利标题: Semiconductor device and a method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12982032申请日: 2010-12-30
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公开(公告)号: US08067251B2公开(公告)日: 2011-11-29
- 发明人: Masachika Masuda , Toshihiko Usami
- 申请人: Masachika Masuda , Toshihiko Usami
- 申请人地址: JP Tokyo
- 专利权人: Elpida Memory, Inc.
- 当前专利权人: Elpida Memory, Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2000-022802 20000131
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
A method including forming an intermediate product, the intermediate product being configured to include a wiring substrate including a plurality of first electrodes, a plurality of second electrodes and a plurality of test electrodes, a first semiconductor chip mounted over the wiring substrate and including a plurality of first pads electrically connected respectively to the first electrodes, and a second semiconductor chip stacked over the first semiconductor chip and including a plurality of second pads electrically connected respectively to the second electrodes; encapsulating the first and second semiconductor chips; and performing electrical tests on the first and second semiconductor chips by use of the test electrodes, after the encapsulating of the first and second semiconductor chips.
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