发明授权
- 专利标题: Microelectronic assemblies having very fine pitch stacking
- 专利标题(中): 微电子组件具有非常细的间距堆积
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申请号: US11318164申请日: 2005-12-23
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公开(公告)号: US08067267B2公开(公告)日: 2011-11-29
- 发明人: Belgacem Haba , Craig S. Mitchell
- 申请人: Belgacem Haba , Craig S. Mitchell
- 申请人地址: US CA San Jose
- 专利权人: Tessera, Inc.
- 当前专利权人: Tessera, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of making a stacked microelectronic assembly includes providing a first microelectronic package that includes a first substrate having a first dielectric layer, conductive posts, and conductive traces extending along the surface of the first dielectric layer; providing a second microelectronic package including a second substrate that includes a second dielectric layer; securing a microelectronic element to one of the surfaces of at least one of the first or second substrates; and joining the conductive posts of the first substrate with the fusible masses of the second substrate. The posts may include a plurality of aligned posts which are aligned in a first row extending in a single orthogonal direction along a surface of the first substrate away from a portion of the first substrate that faces a face of the microelectronic element. The aligned posts are disposed beyond one of the edges of the microelectronic element.
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