发明授权
- 专利标题: Asymmetric segmented channel transistors
- 专利标题(中): 不对称分段通道晶体管
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申请号: US12036911申请日: 2008-02-25
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公开(公告)号: US08067287B2公开(公告)日: 2011-11-29
- 发明人: Peter Baumgartner
- 申请人: Peter Baumgartner
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
Structures, layouts and methods of forming integrated circuits are described. In various embodiments, the current invention includes an asymmetric segmented transistor. The asymmetric segmented transistor includes a source region and a drain region disposed within an active region, a floating source/drain region disposed within the active region, a first channel region disposed in the active region between the source region and the floating source/drain region, the first channel having a first length and a first width. A second channel region is disposed in the active region between the drain region and the floating source/drain region, the second channel having a second length and a second width. A first gate dielectric overlies the first channel region and a second gate dielectric overlies the second channel region. A gate line overlies the first gate dielectric and the second gate dielectric.
公开/授权文献
- US20090212854A1 Asymmetric Segmented Channel Transistors 公开/授权日:2009-08-27