发明授权
- 专利标题: Image sensor and manufacturing method thereof
- 专利标题(中): 图像传感器及其制造方法
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申请号: US12508846申请日: 2009-07-24
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公开(公告)号: US08067740B2公开(公告)日: 2011-11-29
- 发明人: Keita Sasaki , Hideyuki Funaki , Hiroto Honda , Ikuo Fujiwara , Koichi Ishii , Hitoshi Yagi
- 申请人: Keita Sasaki , Hideyuki Funaki , Hiroto Honda , Ikuo Fujiwara , Koichi Ishii , Hitoshi Yagi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-196027 20080730
- 主分类号: H01L31/02
- IPC分类号: H01L31/02
摘要:
An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.
公开/授权文献
- US20100025584A1 IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 公开/授权日:2010-02-04