Invention Grant
US08068361B2 Systems and methods for performing a program-verify process on a nonvolatile memory by selectively pre-charging bit lines associated with memory cells during the verify operations
有权
用于通过在验证操作期间选择性地预充电与存储器单元相关联的位线来对非易失性存储器执行程序验证过程的系统和方法
- Patent Title: Systems and methods for performing a program-verify process on a nonvolatile memory by selectively pre-charging bit lines associated with memory cells during the verify operations
- Patent Title (中): 用于通过在验证操作期间选择性地预充电与存储器单元相关联的位线来对非易失性存储器执行程序验证过程的系统和方法
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Application No.: US12533720Application Date: 2009-07-31
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Publication No.: US08068361B2Publication Date: 2011-11-29
- Inventor: Sang-Gu Kang , Hee-won Lee , Ju Seok Lee , Jung-Ho Song
- Applicant: Sang-Gu Kang , Hee-won Lee , Ju Seok Lee , Jung-Ho Song
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2008-0077033 20080806
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A nonvolatile memory system is operated by performing a program loop on each of a plurality of memory cells, each program loop comprising at least one program-verify operation and selectively pre-charging bit lines associated with each of the plurality of memory cells during the at least one program-verify operation.
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