发明授权
- 专利标题： Patterning method using stacked structure
- 专利标题（中）： 使用堆叠结构的图案化方法
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申请号： US11464496申请日： 2006-08-15
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公开(公告)号： US08071487B2公开(公告)日： 2011-12-06
- 发明人: Meng-Jun Wang , Yi-Hsing Chen , Jiunn-Hsiung Liao , Min-Chieh Yang , Chuan-Kai Wang
- 申请人： Meng-Jun Wang , Yi-Hsing Chen , Jiunn-Hsiung Liao , Min-Chieh Yang , Chuan-Kai Wang
- 申请人地址： TW Science-Based Industrial Park, Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsinchu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A stacked structure for patterning a material layer to form an opening pattern with a predetermined opening width in the layer is provided. The stacked structure includes an underlayer, a silicon rich organic layer, and a photoresist layer. The underlayer is on the material layer. The silicon rich organic layer is between the underlayer and the photoresist layer. The thickness of the photoresist layer is smaller than that of the underlayer and larger than two times of the thickness of the silicon rich organic layer. The thickness of the underlayer is smaller than three times of the predetermined opening width.
公开/授权文献
- US20080045033A1 STACKED STRUCTURE AND PATTERNING METHOD USING THE SAME 公开/授权日：2008-02-21
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