发明授权
- 专利标题： Silicon nitride body and method of manufacture
- 专利标题（中）： 氮化硅体及其制造方法
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申请号： US11962352申请日： 2007-12-21
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公开(公告)号： US08071495B2公开(公告)日： 2011-12-06
- 发明人: Vimal K. Pujari , William T. Collins
- 申请人： Vimal K. Pujari , William T. Collins
- 申请人地址： US UT Salt Lake City
- 专利权人： Ceramatec, Inc.
- 当前专利权人： Ceramatec, Inc.
- 当前专利权人地址： US UT Salt Lake City
- 代理商 David Fonda
- 主分类号： C04B35/587
- IPC分类号： C04B35/587
摘要：
A densified silicon nitride body can be formed using a lanthana-based sintering aid. The composition may exhibit properties that provide a material useful in a variety of applications that can benefit from improved wear characteristics. The composition may be densified by sintering and hot isostatic pressing.
公开/授权文献
- US20080150199A1 SILICON NITRIDE BODY AND METHOD OF MANUFACTURE 公开/授权日：2008-06-26
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