发明授权
US08072046B2 Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode
失效
通孔电极，具有贯通电极的电路板，具有贯通电极的半导体封装，以及具有半导体芯片或封装的叠层半导体封装，具有贯通电极
- 专利标题： Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode
- 专利标题（中）： 通孔电极，具有贯通电极的电路板，具有贯通电极的半导体封装，以及具有半导体芯片或封装的叠层半导体封装，具有贯通电极
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申请号： US12209584申请日： 2008-09-12
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公开(公告)号： US08072046B2公开(公告)日： 2011-12-06
- 发明人: Han Jun Bae , Jong Hoon Kim
- 申请人： Han Jun Bae , Jong Hoon Kim
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2008-0036623 20080421
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H05K1/02
摘要：
A stacked semiconductor package includes a first semiconductor package having a first semiconductor chip having a first pad and a through-hole passing through a the portion corresponding to the pad; a second semiconductor package disposed over the first semiconductor package, and including a second semiconductor chip having a second pad disposed at a portion corresponding to the first pad and blocking the through-hole; and a through-electrode disposed within the through-hole, and having a pillar shaped core supported by the second pad, a through-electrode unit disposed over a surface of the core and electrically connected with the second pad, a first metal layer interposed between the core and the through electrode unit, and a second metal layer interposed between an inner surface of the first semiconductor chip formed by the through-hole and the through-electrode unit.
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