Invention Grant
US08072046B2 Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode
失效
通孔电极,具有贯通电极的电路板,具有贯通电极的半导体封装,以及具有半导体芯片或封装的叠层半导体封装,具有贯通电极
- Patent Title: Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode
- Patent Title (中): 通孔电极,具有贯通电极的电路板,具有贯通电极的半导体封装,以及具有半导体芯片或封装的叠层半导体封装,具有贯通电极
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Application No.: US12209584Application Date: 2008-09-12
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Publication No.: US08072046B2Publication Date: 2011-12-06
- Inventor: Han Jun Bae , Jong Hoon Kim
- Applicant: Han Jun Bae , Jong Hoon Kim
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0036623 20080421
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H05K1/02

Abstract:
A stacked semiconductor package includes a first semiconductor package having a first semiconductor chip having a first pad and a through-hole passing through a the portion corresponding to the pad; a second semiconductor package disposed over the first semiconductor package, and including a second semiconductor chip having a second pad disposed at a portion corresponding to the first pad and blocking the through-hole; and a through-electrode disposed within the through-hole, and having a pillar shaped core supported by the second pad, a through-electrode unit disposed over a surface of the core and electrically connected with the second pad, a first metal layer interposed between the core and the through electrode unit, and a second metal layer interposed between an inner surface of the first semiconductor chip formed by the through-hole and the through-electrode unit.
Public/Granted literature
Information query
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