Invention Grant
US08072046B2 Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode 失效
通孔电极,具有贯通电极的电路板,具有贯通电极的半导体封装,以及具有半导体芯片或封装的叠层半导体封装,具有贯通电极

  • Patent Title: Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode
  • Patent Title (中): 通孔电极,具有贯通电极的电路板,具有贯通电极的半导体封装,以及具有半导体芯片或封装的叠层半导体封装,具有贯通电极
  • Application No.: US12209584
    Application Date: 2008-09-12
  • Publication No.: US08072046B2
    Publication Date: 2011-12-06
  • Inventor: Han Jun BaeJong Hoon Kim
  • Applicant: Han Jun BaeJong Hoon Kim
  • Applicant Address: KR Kyoungki-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Kyoungki-do
  • Agency: Ladas & Parry LLP
  • Priority: KR10-2008-0036623 20080421
  • Main IPC: H01L23/538
  • IPC: H01L23/538 H05K1/02
Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode
Abstract:
A stacked semiconductor package includes a first semiconductor package having a first semiconductor chip having a first pad and a through-hole passing through a the portion corresponding to the pad; a second semiconductor package disposed over the first semiconductor package, and including a second semiconductor chip having a second pad disposed at a portion corresponding to the first pad and blocking the through-hole; and a through-electrode disposed within the through-hole, and having a pillar shaped core supported by the second pad, a through-electrode unit disposed over a surface of the core and electrically connected with the second pad, a first metal layer interposed between the core and the through electrode unit, and a second metal layer interposed between an inner surface of the first semiconductor chip formed by the through-hole and the through-electrode unit.
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