发明授权
- 专利标题: Semiconductor apparatus
- 专利标题(中): 半导体装置
-
申请号: US12453037申请日: 2009-04-28
-
公开(公告)号: US08072048B2公开(公告)日: 2011-12-06
- 发明人: Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- 申请人: Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2008-121527 20080507; JP2008-249189 20080926
- 主分类号: H01L23/552
- IPC分类号: H01L23/552
摘要:
Disclosed is a semiconductor apparatus that prevents diffusion of materials of a magnetic film during the process for manufacturing the semiconductor apparatus. The semiconductor apparatus includes: a substrate; a semiconductor device formed on a principal surface of the substrate and including an interconnect layer; a magnetic shielding film of a magnetic material covering the semiconductor device; and a buffer film disposed between the semiconductor device and the magnetic shielding film. The buffer film prevents diffusion of the magnetic material of the magnetic shielding film.
公开/授权文献
- US20090278240A1 Semiconductor apparatus 公开/授权日:2009-11-12
信息查询
IPC分类: