Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
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Application No.: US12436266Application Date: 2009-05-06
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Publication No.: US08072067B2Publication Date: 2011-12-06
- Inventor: Ming-Chung Chian , Tsan-Yao Cheng , Li-Cheng Lin , Hong-Hsiang Tsai
- Applicant: Ming-Chung Chian , Tsan-Yao Cheng , Li-Cheng Lin , Hong-Hsiang Tsai
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: J.C. Patents
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor structure including a substrate, an insulating layer, a composite pad structure, a passivation layer, and a bump is provided. A circuit structure is disposed on the substrate. The insulating layer covers the substrate and has a first opening exposing the circuit structure. The composite pad structure includes a first conductive layer, a barrier layer, and a second conductive layer which are sequentially disposed. The composite pad structure is disposed on the insulating layer and fills the first opening to electrically connect to the circuit structure. The passivation layer covers the composite pad structure and has a second opening exposing the composite pad structure. The bump fills the second opening and electrically connects to the composite pad structure.
Public/Granted literature
- US20100283146A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-11-11
Information query
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