发明授权
- 专利标题: Electrostatic protection circuit
- 专利标题(中): 静电保护电路
-
申请号: US12078977申请日: 2008-04-09
-
公开(公告)号: US08072720B2公开(公告)日: 2011-12-06
- 发明人: Mototsugu Okushima
- 申请人: Mototsugu Okushima
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 代理机构: McGinn Intellectual Property Law Group, PLLC
- 优先权: JP2007-104829 20070412
- 主分类号: H02H9/00
- IPC分类号: H02H9/00
摘要:
An electrostatic protection circuit that affords protection without effecting transfer of an ordinary output signal includes an output terminal; a ground terminal; a first N-channel transistor having its drain and source connected between the output terminal and the ground terminal GND; a first electrostatic protection element connecting the output terminal and the ground terminal; and a second electrostatic protection element connected the drain and gate of the first N-channel transistor. The second N-channel transistor is connected to the gate of the first N-channel transistor. The gate potential of the first N-channel transistor rises and the gate-to-drain voltage of the first N-channel transistor is limited to a value below a prescribed value by a current that flows into the second electrostatic protection element owing to application of static electricity to the output terminal, and resistance of the second N-channel transistor, which is the ON state, as seen from the gate of the first N-channel transistor.
公开/授权文献
- US20080253044A1 Electrostatic protection circuit 公开/授权日:2008-10-16
信息查询