发明授权
US08072792B2 Integrated circuit with resistive memory cells and method for manufacturing same
有权
具有电阻式存储单元的集成电路及其制造方法
- 专利标题： Integrated circuit with resistive memory cells and method for manufacturing same
- 专利标题（中）： 具有电阻式存储单元的集成电路及其制造方法
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申请号： US12031955申请日： 2008-02-15
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公开(公告)号： US08072792B2公开(公告)日： 2011-12-06
- 发明人: Heinz Hoenigschmid
- 申请人： Heinz Hoenigschmid
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
An integrated circuit including a resistive memory cell and a method of manufacturing the integrated circuit are described. The integrated circuit comprises a plurality of resistive memory cells and a plurality of voltage supply contacts, wherein at least four resistive memory cells are in signal connection with one voltage supply contact.
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