A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a substrate; forming nitride spacers on side walls of the parallel oxide bars, with gaps remaining between adjacent nitride spacers; forming silicon pillars in the gaps; removing the nitride spacers to form a plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film.