Invention Grant
- Patent Title: Semiconductor ceramic composition and method for producing the same
- Patent Title (中): 半导体陶瓷组合物及其制造方法
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Application No.: US12445198Application Date: 2007-10-26
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Publication No.: US08076256B2Publication Date: 2011-12-13
- Inventor: Takeshi Shimada , Kazuya Toji
- Applicant: Takeshi Shimada , Kazuya Toji
- Applicant Address: JP Tokyo
- Assignee: Hitatchi Metals, Ltd.
- Current Assignee: Hitatchi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Stein McEwen, LLP
- Priority: JPP.2006-293366 20061027; JPP.2006-298306 20061101
- International Application: PCT/JP2007/070960 WO 20071026
- International Announcement: WO2008/050877 WO 20080502
- Main IPC: C04B35/00
- IPC: C04B35/00 ; C04B35/14 ; C04B35/16

Abstract:
It is intended to provide a Pb-free semiconductor ceramic composition capable of shifting its Curie temperature toward a positive direction and capable of enhancing its jump characteristic while minimizing the increase in the resistivity at room temperature. There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder containing a calcined BT powder containing a calcined powder of (BaR)TiO3 or a calcined powder of Ba(TiM)O3 (in which R and M each are a semiconductor dopant), and a calcined BNT powder containing a calcined powder of (BiNa)TiO3; in which BaCO3 and/or TiO2 is/are added to the calcined BT powder or the calcined BNT powder or to the mixed calcined powder.
Public/Granted literature
- US20100075824A1 SEMICONDUCTOR CERAMIC COMPOSITION AND METHOD FOR PRODUCING THE SAME Public/Granted day:2010-03-25
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