Invention Grant
- Patent Title: Substrate placement in immersion lithography
- Patent Title (中): 浸没光刻中的基板放置
-
Application No.: US11907045Application Date: 2007-10-09
-
Publication No.: US08077291B2Publication Date: 2011-12-13
- Inventor: Christiaan Alexander Hoogendam , Gerrit Johannes Nijmeijer , Minne Cuperus , Petrus Anton Willern Cornelia Maria Van Eijck
- Applicant: Christiaan Alexander Hoogendam , Gerrit Johannes Nijmeijer , Minne Cuperus , Petrus Anton Willern Cornelia Maria Van Eijck
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03B27/32
- IPC: G03B27/32 ; G03B27/68

Abstract:
A method for determining an offset between a center of a substrate and a center of a depression in a chuck includes providing a test substrate to the depression, the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.
Public/Granted literature
- US20080106723A1 Substrate placement in immersion lithography Public/Granted day:2008-05-08
Information query