Invention Grant
- Patent Title: Capacitor structure with raised resonance frequency
- Patent Title (中): 谐振频率升高的电容结构
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Application No.: US12109356Application Date: 2008-04-25
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Publication No.: US08077443B2Publication Date: 2011-12-13
- Inventor: Wei-Ting Chen , Chang-Sheng Chen , Chin-Sun Shyu , Chang-Lin Wei , Cheng-Hua Tsai , Kuo-Chiang Chin
- Applicant: Wei-Ting Chen , Chang-Sheng Chen , Chin-Sun Shyu , Chang-Lin Wei , Cheng-Hua Tsai , Kuo-Chiang Chin
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW96138663A 20071016
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G5/01
Abstract:
A capacitor structure is provided. In the capacitor structure, a signal electrode plate and an extension ground electrode plate are disposed on the same plane to form a co-plane capacitor structure. Due to slow wave characteristic, the resonance frequency of the capacitor structure is effectively raised and the capacitor structure may be applied in high frequency.
Public/Granted literature
- US20090268369A1 CAPACITOR STRUCTURE WITH RAISED RESONANCE FREQUENCY Public/Granted day:2009-10-29
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