- 专利标题： E/P durability by using a sub-range of a full programming range
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申请号： US13018152申请日： 2011-01-31
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公开(公告)号： US08077518B2公开(公告)日： 2011-12-13
- 发明人: Kwok W. Yeung , Meng-Kun Lee
- 申请人： Kwok W. Yeung , Meng-Kun Lee
- 申请人地址： US CA Santa Clara
- 专利权人： Link—A—Media Devices Corporation
- 当前专利权人： Link—A—Media Devices Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Van Pelt, Yi & James LLP
- 主分类号： G11C16/06
- IPC分类号： G11C16/06
摘要：
A NAND flash memory system is controlled by determining whether to change a value of a voltage threshold. The voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip. In the event it is determined to change the value of the voltage threshold, the value of the voltage threshold is changed and the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip is stored.
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