发明授权
US08077536B2 Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
有权
使用可控硅整流器原理操作具有浮体晶体管的半导体存储器件的方法
- 专利标题： Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
- 专利标题（中）： 使用可控硅整流器原理操作具有浮体晶体管的半导体存储器件的方法
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申请号： US12533661申请日： 2009-07-31
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公开(公告)号： US08077536B2公开(公告)日： 2011-12-13
- 发明人: Yuniarto Widjaja
- 申请人： Yuniarto Widjaja
- 申请人地址： US CA San Jose
- 专利权人： Zeno Semiconductor, Inc.
- 当前专利权人： Zeno Semiconductor, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Law Office of Alan W. Cannon
- 代理商 Alan W. Cannon
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a substrate being made of a material having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type; a second region having the second conductivity type, the second region being spaced apart from the first region; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; and a gate positioned between the first and second regions and adjacent the body region.