发明授权
- 专利标题： Interconnection substrate and semiconductor device, manufacturing method of interconnection substrate
- 专利标题（中）： 互连基板和半导体器件，互连基板的制造方法
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申请号： US11968341申请日： 2008-01-02
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公开(公告)号： US08080875B2公开(公告)日： 2011-12-20
- 发明人: Yoshihiko Imanaka
- 申请人： Yoshihiko Imanaka
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2007-038199 20070219
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An interconnection substrate including therein one or more resin layers, each of the resin layers including therein a via-hole penetrating from a top surface to a bottom surface of the resin layer. A via-plug of metal particles is formed in the via-hole. Each of the metal particles has a flattened shape generally parallel to a plane of the resin layer.
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