发明授权
- 专利标题: Multilayer chip capacitor
- 专利标题(中): 多层片式电容器
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申请号: US12267112申请日: 2008-11-07
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公开(公告)号: US08081416B2公开(公告)日: 2011-12-20
- 发明人: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- 申请人: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- 申请人地址: KR Gyunggi-do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Gyunggi-do
- 代理机构: McDermott Will & Emery LLP
- 优先权: KR10-2008-0042819 20080508
- 主分类号: H01G4/005
- IPC分类号: H01G4/005 ; H01G4/228
摘要:
A multilayer chip capacitor includes a capacitor body provided by a stack of a plurality of dielectric layers, a plurality of internal electrodes disposed in the capacitor body such that the internal electrodes of opposite polarities are alternately disposed to face each other with the dielectric layer interposed between each facing set of the internal electrodes, and a plurality of external electrodes disposed on an outer face of the capacitor body and electrically connected with the internal electrode. Each of the plurality of internal electrodes includes a main electrode part, and at least one lead extending from the main electrode part to a side face of the capacitor body and connected to a corresponding one of the external electrodes. The lead extends to the corresponding external electrode to be inclined with respect to the main electrode part thereof.
公开/授权文献
- US20090279228A1 MULTILAYER CHIP CAPACITOR 公开/授权日:2009-11-12
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