发明授权
- 专利标题: Amorphous semiconductor threshold switch volatile memory cell
- 专利标题(中): 非晶半导体阈值开关易失性存储单元
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申请号: US12637358申请日: 2009-12-14
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公开(公告)号: US08081506B2公开(公告)日: 2011-12-20
- 发明人: Charles C. Kuo , Derchang Kau
- 申请人: Charles C. Kuo , Derchang Kau
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Trop, Pruner & Hu, P.C.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A voltage memory switch may be formed of an amorphous semiconductor threshold switch and a select device. The amorphous threshold switch may be latched into one of two different current conducting levels. Then, in some embodiments, a relatively dense memory array can be achieved by maintaining an appropriate bias on the cell to prevent it from losing the programmed state.