发明授权
US08084337B2 Growth of III-V compound semiconductor nanowires on silicon substrates
有权
在硅衬底上III-V族化合物半导体纳米线的生长
- 专利标题： Growth of III-V compound semiconductor nanowires on silicon substrates
- 专利标题（中）： 在硅衬底上III-V族化合物半导体纳米线的生长
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申请号： US12734252申请日： 2008-10-27
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公开(公告)号： US08084337B2公开(公告)日： 2011-12-27
- 发明人: Lars Samuelson , Jonas Ohlsson , Thomas Mårtensson , Patrik Svensson
- 申请人： Lars Samuelson , Jonas Ohlsson , Thomas Mårtensson , Patrik Svensson
- 申请人地址： SE Lund
- 专利权人： QuNano AB
- 当前专利权人： QuNano AB
- 当前专利权人地址： SE Lund
- 代理机构： The Marbury Law Group, PLLC
- 优先权： SE0702402 20071026; SE0702404 20071026
- 国际申请： PCT/SE2008/051213 WO 20081027
- 国际公布： WO2009/054804 WO 20090430
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L29/12 ; H01L29/20
摘要：
The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
公开/授权文献
- US20100252808A1 NANOWIRE GROWTH ON DISSIMILAR MATERIAL 公开/授权日：2010-10-07
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