发明授权
- 专利标题: Array-based ion storage system and method therefor
- 专利标题(中): 基于阵列的离子存储系统及其方法
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申请号: US12318343申请日: 2008-12-24
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公开(公告)号: US08084737B2公开(公告)日: 2011-12-27
- 发明人: Yuanjing Li , Zhiqiang Chen , Qingjun Zhang , Hua Peng , Zhude Dai , Shaoji Mao , Dexu Lin
- 申请人: Yuanjing Li , Zhiqiang Chen , Qingjun Zhang , Hua Peng , Zhude Dai , Shaoji Mao , Dexu Lin
- 申请人地址: CN Beijing CN Beijing
- 专利权人: Nuctech Company Limited,Tsinghua University
- 当前专利权人: Nuctech Company Limited,Tsinghua University
- 当前专利权人地址: CN Beijing CN Beijing
- 代理机构: Jacobson Holman PLLC
- 优先权: CN200710304329 20071227
- 主分类号: H01J27/00
- IPC分类号: H01J27/00
摘要:
An array-based ion storage system includes an ion generation section, and an ion storage section having a first end electrode coupled to the ion generation section and having multiple holes, a second end electrode having multiple holes, an intermediate electrode having multiple holes, a first insulator formed as a ring between the first end electrode and the intermediate electrode, and a second insulator formed as a ring between the intermediate electrode and the second end electrode. The ion storage section can be made thinner to facilitate consistency in ion extraction and reduce the spread of an ion mobility spectrum peak. The insulators have a big hole, and the ions cannot bump onto the insulation material during ion vibration or thermal movement in the storage space. Therefore, charge transfer and accumulation at the insulator and the subsequent discharge will not occur, suppressing instability of storage and loss of ions.
公开/授权文献
- US20100065755A1 Array-based ion storage system and method therefor 公开/授权日:2010-03-18
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