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US08084761B2 Structure for phase change memory and the method of forming same 有权
相变存储器的结构及其形成方法

Structure for phase change memory and the method of forming same
摘要：
A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in contact with the phase change material. A contact structure formed in the first insulating material between the first contact electrode structure and the phase change material is also included. The contact structure is formed by an insulating material breakdown process. A method of forming a phase change device is also described.
摘要（中）：

相变装置包括第一接触电极结构，相变材料和相变材料与第一接触电极结构之间的第一绝缘材料和与相变材料接触的第二接触电极。 还包括在第一接触电极结构和相变材料之间形成在第一绝缘材料中的接触结构。 接触结构由绝缘材料击穿过程形成。 还描述了形成相变装置的方法。

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