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US08084799B2 Integrated circuit with memory having a step-like programming characteristic 有权
具有阶梯状编程特性的具有存储器的集成电路

Integrated circuit with memory having a step-like programming characteristic
摘要：
A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.
摘要（中）：

存储单元包括在第一电极和第二电极之间的第一电极，第二电极和相变材料。 相变材料具有阶梯状编程特性。 第一电极，第二电极和相变材料形成通孔或沟槽存储单元。

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