- 专利标题: PMR write with flux choking area
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申请号: US12586249申请日: 2009-09-17
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公开(公告)号: US08085498B2公开(公告)日: 2011-12-27
- 发明人: Zhigang Bai , Yue Liu , Kowang Liu , Yan Wu , Moris Dovek
- 申请人: Zhigang Bai , Yue Liu , Kowang Liu , Yan Wu , Moris Dovek
- 申请人地址: US CA Milpitas
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号: G11B5/127
- IPC分类号: G11B5/127
摘要:
A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent track erasure. The FCL has a substantially smaller thickness than a top section of the trailing shield to which it is attached along a side opposite the ABS. As a result, pole tip protrusion is reduced compared to prior art PMR writers. The FCL contacts a trailing side of WS1 at the ABS and one or both of the trailing sides of the WS1 and FCL may be tapered or perpendicular with respect to the ABS. The top trailing shield section, FCL, and WS1 may be comprised of NiFe, CoFe, CoFeNi, or alloys thereof.
公开/授权文献
- US20110063755A1 PMR write with flux choking area 公开/授权日:2011-03-17