发明授权
- 专利标题: Reading technique for memory cell with electrically floating body transistor
- 专利标题(中): 具有电浮体晶体管的存储单元的读取技术
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申请号: US12130011申请日: 2008-05-30
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公开(公告)号: US08085594B2公开(公告)日: 2011-12-27
- 发明人: Serguei Okhonin , Mikhail Nagoga , Cedric Bassin
- 申请人: Serguei Okhonin , Mikhail Nagoga , Cedric Bassin
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wilmer Cutler Pickering Hale and Dorr LLP
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A semiconductor device along with circuits including the same and methods of operating the same are described. The device comprises a memory cell consisting essentially of one transistor. The transistor comprises a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. The device includes data sense circuitry coupled to the memory cell. The data sense circuitry comprises a word line coupled to the gate region and a bit output coupled to the source region or the drain region.
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