发明授权
US08085594B2 Reading technique for memory cell with electrically floating body transistor 有权
具有电浮体晶体管的存储单元的读取技术

Reading technique for memory cell with electrically floating body transistor
摘要:
A semiconductor device along with circuits including the same and methods of operating the same are described. The device comprises a memory cell consisting essentially of one transistor. The transistor comprises a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. The device includes data sense circuitry coupled to the memory cell. The data sense circuitry comprises a word line coupled to the gate region and a bit output coupled to the source region or the drain region.
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