发明授权
- 专利标题: Method of producing an electronic device
- 专利标题(中): 电子设备的制造方法
-
申请号: US11905831申请日: 2007-10-04
-
公开(公告)号: US08087136B2公开(公告)日: 2012-01-03
- 发明人: Kazushige Ito , Akira Sato
- 申请人: Kazushige Ito , Akira Sato
- 申请人地址: JP Tokyo
- 专利权人: TDK Corporation
- 当前专利权人: TDK Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP2004-252595 20040831
- 主分类号: H01G7/00
- IPC分类号: H01G7/00
摘要:
An electronic device having an element body, wherein dielectric layers and internal electrode layers are alternately stacked, wherein a hetero phase is formed in the dielectric layers and/or the internal electrode layers; and the hetero phase includes a Mg element and a Mn element. Preferably, the hetero phase is formed at least at a part near boundaries of the dielectric layers and the internal electrode layers.
公开/授权文献
- US20080110006A1 Electronic device and the prduction method 公开/授权日:2008-05-15
信息查询