发明授权
- 专利标题: Low decomposition storage of a tantalum precursor
- 专利标题(中): 钽前体的低分解储存
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申请号: US12340888申请日: 2008-12-22
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公开(公告)号: US08088938B2公开(公告)日: 2012-01-03
- 发明人: Nathan Stafford , Christian Dussarrat , Olivier Letessier , Ravi K. Laxman
- 申请人: Nathan Stafford , Christian Dussarrat , Olivier Letessier , Ravi K. Laxman
- 申请人地址: US TX Dallas US CA Fremont
- 专利权人: Air Liquide Electronics U.S. LP,American Air Liquide, Inc.
- 当前专利权人: Air Liquide Electronics U.S. LP,American Air Liquide, Inc.
- 当前专利权人地址: US TX Dallas US CA Fremont
- 代理商 Patricia E. McQueeney
- 主分类号: C07F9/00
- IPC分类号: C07F9/00 ; B01J19/00
摘要:
Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
公开/授权文献
- US20090163732A1 Low Decomposition Storage of a Tantalum Precursor 公开/授权日:2009-06-25
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