发明授权
US08089042B2 Apparatus and method for processing substrate using neutralized beams including applying a voltage to a substrate support
有权
用于使用中和束处理衬底的装置和方法,包括向衬底支撑件施加电压
- 专利标题: Apparatus and method for processing substrate using neutralized beams including applying a voltage to a substrate support
- 专利标题(中): 用于使用中和束处理衬底的装置和方法,包括向衬底支撑件施加电压
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申请号: US12323783申请日: 2008-11-26
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公开(公告)号: US08089042B2公开(公告)日: 2012-01-03
- 发明人: Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
- 申请人: Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Myers Bigel Sibley & Sajovec
- 优先权: KR10-2007-0123631 20071130
- 主分类号: H05H3/02
- IPC分类号: H05H3/02
摘要:
An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.
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