发明授权
US08089114B2 Non-volatile memory devices including blocking and interface patterns between charge storage patterns and control electrodes and related methods
有权
包括电荷存储模式和控制电极之间的阻塞和接口模式的非易失性存储器件及相关方法
- 专利标题： Non-volatile memory devices including blocking and interface patterns between charge storage patterns and control electrodes and related methods
- 专利标题（中）： 包括电荷存储模式和控制电极之间的阻塞和接口模式的非易失性存储器件及相关方法
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申请号： US12266032申请日： 2008-11-06
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公开(公告)号： US08089114B2公开(公告)日： 2012-01-03
- 发明人: Ju-Hyung Kim , Sung-Il Chang , Chang-Seok Kang , Jung-Dal Choi
- 申请人： Ju-Hyung Kim , Sung-Il Chang , Chang-Seok Kang , Jung-Dal Choi
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR2007-113796 20071108; KR2008-23972 20080314
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A non-volatile memory device may include a semiconductor substrate and an isolation layer on the semiconductor substrate wherein the isolation layer defines an active region of the semiconductor substrate. A tunnel insulation layer may be provided on the active region of the semiconductor substrate, and a charge storage pattern may be provided on the tunnel insulation layer. An interface layer pattern may be provided on the charge storage pattern, and a blocking insulation pattern may be provided on the interface layer pattern. Moreover, the block insulation pattern may include a high-k dielectric material, and the interface layer pattern and the blocking insulation pattern may include different materials. A control gate electrode may be provided on the blocking insulating layer so that the blocking insulation pattern is between the interface layer pattern and the control gate electrode. Related methods are also discussed.
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