发明授权
- 专利标题: Nonvolatile semiconductor memory device and method of manufacturing the same
- 专利标题(中): 非易失性半导体存储器件及其制造方法
-
申请号: US12564605申请日: 2009-09-22
-
公开(公告)号: US08089121B2公开(公告)日: 2012-01-03
- 发明人: Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Masaru Kito
- 申请人: Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Masaru Kito
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-293150 20081117
- 主分类号: H01L21/8246
- IPC分类号: H01L21/8246 ; H01L27/115
摘要:
A nonvolatile semiconductor memory device includes a semiconductor layer as a channel, a conductive layer which is formed on a surface of the semiconductor layer with a first insulating layer and a second insulating layer interposed therebetween and functions as a control gate electrode; and a plurality of first charge storage layers formed between the first insulating layer and the second insulating layer. The plurality of first charge storage layers are formed in isolation from one another along a surface of the first insulating layer. The first insulating layer is formed so as to protrude towards the semiconductor layer at a position where each of the first charge storage layers is formed.