Invention Grant
- Patent Title: IMS formed as can for semiconductor housing
- Patent Title (中): IMS形成为半导体外壳的容器
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Application No.: US11591834Application Date: 2006-11-02
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Publication No.: US08089147B2Publication Date: 2012-01-03
- Inventor: Mark Pavier , David Bushnell
- Applicant: Mark Pavier , David Bushnell
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
An insulated metal substrate composite has a patterned conductive layer on one surface and receives one or more electrodes of MOSFETs or other die on the patterned segments which lead to the edge of the IMS. The outer periphery of the IMS is cupped or bent to form a shallow can with two or more die fixed to and thermally coupled to the flat web of the can while electrodes on the die surfaces thermally coupled to the web of the can lead to terminals on the rim of the can which are coplanar with the bottom surfaces of the die. The electrodes can be externally or internally connected to form a half bridge circuit.
Public/Granted literature
- US20070096274A1 IMS formed as can for semiconductor housing Public/Granted day:2007-05-03
Information query
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