发明授权
- 专利标题: Method for eliminating loading effect using a via plug
- 专利标题(中): 使用通孔插头消除负载效应的方法
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申请号: US12637704申请日: 2009-12-14
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公开(公告)号: US08089153B2公开(公告)日: 2012-01-03
- 发明人: Wu Xiang Hui , Ching-Tien Ma , Man Hua Shen , Chi Yu Shan
- 申请人: Wu Xiang Hui , Ching-Tien Ma , Man Hua Shen , Chi Yu Shan
- 申请人地址: CN Shanghai
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址: CN Shanghai
- 代理机构: Kilpatrick Townsend and Stockton LLP
- 优先权: CN200710042145 20070618
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
Method for eliminating loading effect using a via plug. According to an embodiment, the present invention provides a method of processing an integrated circuit wherein a loading effect is reduced. The method includes a step for providing a substrate, which is characterized by a first thickness. The method also includes a stop for forming an inter metal dielectric layer overlaying the substrate. The inter metal dielectric layer is characterized by a second thickness. The method additionally includes a step for forming a first photoresist layer overlaying the inter metal dielectric layer. The first photoresist layer is associated with a first pattern. Additionally, the method includes a step for forming a first opening positioned at least partially inside the inter metal dielectric layer. The first via opening is characterized by a first depth. The method additionally includes a step for removing the first photoresist layer. The method further includes a step for forming a via plug.
公开/授权文献
- US20100133702A1 METHOD FOR ELIMINATING LOADING EFFECT USING A VIA PLUG 公开/授权日:2010-06-03
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