An IC interconnect according to one embodiment includes a first via positioned in a dielectric and coupled to a high current device at one end; a buffer metal segment positioned in a dielectric and coupled to a top portion of the first via; and a plurality of second vias positioned in a dielectric and coupled to the buffer metal segment at a bottom end and to a metal power line at a top end thereof, wherein the first via is coupled to a first end of the buffer metal segment and the plurality of second vias are coupled to a second end of the buffer metal segment, such that the first via is horizontally off-set from all of the plurality of second vias, wherein the butter metal segment is substantially shorter in length than the metal power line.