发明授权
- 专利标题: Semiconductor device and method for manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12538410申请日: 2009-08-10
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公开(公告)号: US08089162B2公开(公告)日: 2012-01-03
- 发明人: Kenichi Watanabe , Masanobu Ikeda , Takahiro Kimura
- 申请人: Kenichi Watanabe , Masanobu Ikeda , Takahiro Kimura
- 申请人地址: JP Yokohama
- 专利权人: Fujitsu Semiconductor Limited
- 当前专利权人: Fujitsu Semiconductor Limited
- 当前专利权人地址: JP Yokohama
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2002-256152 20020830
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L23/48 ; H01L29/40
摘要:
In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
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