发明授权
- 专利标题: Planar magnetic structure
- 专利标题(中): 平面磁结构
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申请号: US12454083申请日: 2009-05-12
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公开(公告)号: US08089331B2公开(公告)日: 2012-01-03
- 发明人: Boris S. Jacobson , Mark P. Barnett
- 申请人: Boris S. Jacobson , Mark P. Barnett
- 申请人地址: US MA Waltham
- 专利权人: Raytheon Company
- 当前专利权人: Raytheon Company
- 当前专利权人地址: US MA Waltham
- 代理机构: Iandiorio Teska & Coleman
- 主分类号: H01F27/36
- IPC分类号: H01F27/36 ; H01F5/00 ; H01F17/04 ; H01F27/28
摘要:
An improved planar magnetic structure in which the voltage gradient between core and windings is reduced by shields disposed between the one or more legs of the core and the windings and extending through the PWB layers; vias are offset to permit them to be contained within the path of the winding; and the induced magnetic and eddy currents intrinsic to interstitial shield layers are reduced by configuring the shield conductors with pairs of courses with opposite and offsetting current propagation.
公开/授权文献
- US20100289610A1 Planar magnetic structure 公开/授权日:2010-11-18
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