发明授权
US08089571B2 Active matrix substrate, method for fabricating active matrix substrate, display device, liquid crystal display device, and television device
有权
有源矩阵基板,有源矩阵基板的制造方法,显示装置,液晶显示装置以及电视装置
- 专利标题: Active matrix substrate, method for fabricating active matrix substrate, display device, liquid crystal display device, and television device
- 专利标题(中): 有源矩阵基板,有源矩阵基板的制造方法,显示装置,液晶显示装置以及电视装置
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申请号: US12458215申请日: 2009-07-02
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公开(公告)号: US08089571B2公开(公告)日: 2012-01-03
- 发明人: Toshifumi Yagi , Tomoki Noda , Toshihide Tsubata , Masanori Takeuchi , Kenji Enda
- 申请人: Toshifumi Yagi , Tomoki Noda , Toshihide Tsubata , Masanori Takeuchi , Kenji Enda
- 申请人地址: JP Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka
- 代理机构: Nixon & Vanderhye P.C.
- 优先权: JP2004-364498 20041216; JP2005-295015 20051007
- 主分类号: G02F1/1343
- IPC分类号: G02F1/1343
摘要:
An active matrix substrate (12) includes a substrate, a TFT (24) formed on the substrate, a storage capacitor element (20) formed on the substrate, an interlayer insulating film covering the storage capacitor element (20), and a pixel electrode (21) formed on the interlayer insulating film. The storage capacitor element (20) includes a storage capacitor line (27), an insulating film formed on the storage capacitor line (27), and two or more storage capacitor electrodes (25a, 25b, 25c) opposed to the storage capacitor line (27) with the insulating film interposed therebetween. The two or more storage capacitor electrodes (25a, 25b, 25c) are electrically connected via associated contact holes (26a, 26b, 26c) formed in the interlayer insulating film to the pixel electrode (21) and electrically continuous with a drain electrode of the TFT (24).