Invention Grant
US08092707B2 Compositions and methods for modifying a surface suited for semiconductor fabrication
有权
用于修改适合于半导体制造的表面的组合物和方法
- Patent Title: Compositions and methods for modifying a surface suited for semiconductor fabrication
- Patent Title (中): 用于修改适合于半导体制造的表面的组合物和方法
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Application No.: US11839329Application Date: 2007-08-15
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Publication No.: US08092707B2Publication Date: 2012-01-10
- Inventor: L. Charles Hardy , Heather K. Kranz , Thomas E. Wood , David A. Kaisaki , John J. Gagliardi , John C. Clark , Patricia M. Savu , Philip G. Clark
- Applicant: L. Charles Hardy , Heather K. Kranz , Thomas E. Wood , David A. Kaisaki , John J. Gagliardi , John C. Clark , Patricia M. Savu , Philip G. Clark
- Applicant Address: US MN St. Paul
- Assignee: 3M Innovative Properties Company
- Current Assignee: 3M Innovative Properties Company
- Current Assignee Address: US MN St. Paul
- Agent James A. Baker; Ann Kulprathipanja
- Main IPC: C09K13/00
- IPC: C09K13/00

Abstract:
The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in modifying a surface of a wafer suited for fabrication of a semiconductor device. In some embodiments, the working liquids are aqueous solutions of initial components substantially free of loose abrasive particles, the components including water, a surfactant, and a pH buffer exhibiting at least one pKa greater than 7. In certain embodiments, the pH buffer includes a basic pH adjusting agent and an acidic complexing agent, and the working liquid exhibits a pH from about 7 to about 12. In further embodiments, the disclosure provides a fixed abrasive article comprising a surfactant suitable for modifying the surface of a wafer, and a method of making the fixed abrasive article. Additional embodiments describe methods that may be used to modify a wafer surface.
Public/Granted literature
- US20080026583A1 COMPOSITIONS AND METHODS FOR MODIFYING A SURFACE SUITED FOR SEMICONDUCTOR FABRICATION Public/Granted day:2008-01-31
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