Invention Grant
US08092899B2 Method of activating a silicon surface for subsequent patterning of molecules onto said surface
失效
激活硅表面以便随后将分子图案化到所述表面上的方法
- Patent Title: Method of activating a silicon surface for subsequent patterning of molecules onto said surface
- Patent Title (中): 激活硅表面以便随后将分子图案化到所述表面上的方法
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Application No.: US12173490Application Date: 2008-07-15
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Publication No.: US08092899B2Publication Date: 2012-01-10
- Inventor: Jurina Wessels , William E. Ford , Akio Yasuda
- Applicant: Jurina Wessels , William E. Ford , Akio Yasuda
- Applicant Address: DE Cologne
- Assignee: Sony Deutschland GmbH
- Current Assignee: Sony Deutschland GmbH
- Current Assignee Address: DE Cologne
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: EP03028132 20031205
- Main IPC: B32B3/10
- IPC: B32B3/10
Abstract:
The present invention relates to a method of activating a silicon surface for subsequent patterning of molecules onto said surface, and to patterns produced by this method, and further to uses of said pattern.
Public/Granted literature
- US20080280110A1 METHOD OF ACTIVATING A SILICON SURFACE FOR SUBSEQUENT PATTERNING OF MOLECULES ONTO SAID SURFACE Public/Granted day:2008-11-13
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