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US08093579B2 Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip 有权
在其p掺杂区域中具有减小的带偏移的半导体芯片和用于制造半导体芯片的方法

Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip
摘要：
A semiconductor chip (1) comprises a p-doped region (I) having a cladding layer (18) and a contact layer (21) between which a first interlayer (19) and a second interlayer (20) are arranged. A concentration of a first material component (B) within the first and the second interlayer (19, 20) changes in such a way that the band gap varies in a range lying between the band gap of the cladding layer (18) and the band gap of the contact layer (21). A method for producing a semiconductor chip of this type is also disclosed.
摘要（中）：

半导体芯片（1）包括具有包覆层（18）的p掺杂区域（I）和布置有第一中间层（19）和第二中间层（20）的接触层（21）。 第一和第二中间层（19,20）内的第一材料成分（B）的浓度以这样的方式变化，使得带隙在包层（18）的带隙与带 接触层（21）的间隙。 还公开了一种这种半导体芯片的制造方法。

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