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发明授权
US08094485B2 Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect 有权
具有氧缺陷氧化层的可变电阻非易失性存储器件和不对称衬底偏置效应

Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
摘要：
The variable resistance nonvolatile storage device includes a memory cell (300) that is formed by connecting in series a variable resistance element (309) including a variable resistance layer (309b) which reversibly changes based on electrical signals each having a different polarity and a transistor (317) including a semiconductor substrate (301) and two N-type diffusion layer regions (302a, 302b), wherein the variable resistance layer (309b) includes an oxygen-deficient oxide of a transition metal, lower and upper electrodes (309a, 309c) are made of materials of different elements, a standard electrode potential V1 of the lower electrode (309a), a standard electrode potential V2 of the upper electrode (309c), and a standard electrode potential Vt of the transition metal satisfy Vt
摘要（中）：

可变电阻非易失性存储装置包括通过串联连接可变电阻元件（309）形成的存储单元（300），该可变电阻元件（309）包括基于各自具有不同极性的电信号可逆地改变的可变电阻层（309b）和晶体管 （307），包括半导体衬底（301）和两个N型扩散层区域（302a，302b），其中可变电阻层（309b）包括过渡金属的氧缺乏氧化物，下电极和上电极（309a， 309c）的材料由下部电极（309a）的标准电极电位V1，上部电极（309c）的标准电极电位V2，过渡金属的标准电极电位Vt满足Vt

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