Invention Grant
US08097476B2 Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package 有权
发光二极管和晶圆级封装方法,晶圆级接合方法以及晶圆级封装的电路结构

Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package
Abstract:
This invention discloses a light emitting diode, a wafer level package method, a wafer level bonding method, and a circuit structure for a wafer level package. The light emitting diode includes a package carrier, a conducting material, at least one light emitting diode structure and a package material. The package carrier has at least one package unit and two through holes on the package carrier and corresponding to the package unit. The conducting material is disposed in the through holes and formed at the bottom of the package unit. The light emitting diode structure is formed on a substrate. The substrate having a light emitting diode structure is flipped over in the package unit, and the electrodes of the light emitting diode structure are bonded with the conducting material. After the substrate is removed, a package material is stuffed in the package unit or on the light emitting diode structure.
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