发明授权
- 专利标题： Shallow trench isolation for a memory
- 专利标题（中）： 浅沟槽隔离用于记忆
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申请号： US12341002申请日： 2008-12-22
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公开(公告)号： US08097506B2公开(公告)日： 2012-01-17
- 发明人: Alessandro Grossi , Marcello Mariani , Paolo Cappelletti
- 申请人： Alessandro Grossi , Marcello Mariani , Paolo Cappelletti
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/76 ; H01L21/302
摘要：
In some embodiments, a gate structure with a spacer on its side may be used as a mask to form self-aligned trenches in a microelectronic memory, such as a flash memory. A first portion of the gate structure may be used to form the mask, together with sidewall spacers, in some embodiments. Then, after forming the shallow trench isolations, a second portion of the gate structure may be added to form a mushroom shaped gate structure.
公开/授权文献
- US20100155804A1 Shallow Trench Isolation For A Memory 公开/授权日：2010-06-24
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