发明授权
- 专利标题: Semiconductor component including a lateral transistor component
- 专利标题(中): 半导体元件包括横向晶体管元件
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申请号: US12421346申请日: 2009-04-09
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公开(公告)号: US08097880B2公开(公告)日: 2012-01-17
- 发明人: Joachim Weyers , Anton Mauder , Franz Hirler , Paul Kuepper
- 申请人: Joachim Weyers , Anton Mauder , Franz Hirler , Paul Kuepper
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 代理机构: Dicke, Billig & Czaja, PLLC
- 主分类号: H01L29/04
- IPC分类号: H01L29/04
摘要:
A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. A first and a second semiconductor layer are arranged on above another and are separated from another by a dielectric layer. The first semiconductor layer includes a polycrystalline semiconductor material, an amorphous semiconductor material or an organic semiconductor material. In the first semiconductor layer: a source zone, a body zone, a drift zone and a drain zone are provided. In the second semiconductor layer; a drift control zone is arranged adjacent to the drift zone, including a control terminal at a first lateral end for applying a control potential, and is coupled to the drain zone via a rectifying element at a second lateral end. A gate electrode is arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric layer.