Invention Grant
US08097931B2 Fuse part in semiconductor device and method for forming the same
有权
半导体装置中的保险丝部件及其形成方法
- Patent Title: Fuse part in semiconductor device and method for forming the same
- Patent Title (中): 半导体装置中的保险丝部件及其形成方法
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Application No.: US12344174Application Date: 2008-12-24
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Publication No.: US08097931B2Publication Date: 2012-01-17
- Inventor: Byung-Duk Lee
- Applicant: Byung-Duk Lee
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2008-0030268 20080401
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A fuse part in a semiconductor device has a plurality of fuse lines extended along a first direction with a given width along a second direction. The fuse part includes a first conductive pattern having a space part formed in a fuse line region over a substrate, wherein portions of the first conductive pattern are spaced apart by the space part along the first direction. The fuse part includes a first insulation pattern formed over the space part, the first insulation pattern having a width smaller than a width of the first conductive pattern along the second direction and a thickness greater than a thickness of the first conductive pattern, and a second conductive pattern formed over the first insulation pattern, the second conductive pattern having a width greater than the width of the first insulation pattern along the second direction.
Public/Granted literature
- US20090243033A1 FUSE PART IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2009-10-01
Information query
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