发明授权
- 专利标题: IC having TSV arrays with reduced TSV induced stress
- 专利标题(中): IC具有减少TSV诱导应力的TSV阵列
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申请号: US12648871申请日: 2009-12-29
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公开(公告)号: US08097964B2公开(公告)日: 2012-01-17
- 发明人: Jeffrey Alan West , Margaret Rose Simmons-Matthews , Masazumi Amagai
- 申请人: Jeffrey Alan West , Margaret Rose Simmons-Matthews , Masazumi Amagai
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Steven A. Shaw; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
An integrated circuit (IC) includes a substrate having a top side having active circuitry thereon including a plurality of metal interconnect levels including a first metal interconnect level and a top metal interconnect level, and a bottom side. At least one TSV array includes a plurality of TSVs. The TSVs are positioned in rows including a plurality of interior rows and a pair of exterior rows and a plurality of columns including a plurality of interior columns and a pair of exterior columns. At least a portion of the TSVs in the array are electrically connected TSVs that are coupled to a TSV terminating metal interconnect level selected from the plurality of metal interconnect levels. At least one of the exterior rows or exterior columns include a lower number of electrically connected TSVs compared to a maximum number of electrically connected TSVs in the interior rows and interior columns, respectively.
公开/授权文献
- US20100171226A1 IC HAVING TSV ARRAYS WITH REDUCED TSV INDUCED STRESS 公开/授权日:2010-07-08
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